与L6480配合使用的最小RDS值是多少？

你好，
 
 
理论上，外部MOSFET的RdsON值没有限制。降低导通电阻具有以下缺点：
- 换向速度较低，因为具有较低RdsON的MOSFET通常具有较高的总栅极电荷（目标MOSFET的总栅极电荷应低于IGATE x TCC产品）
- 过电流保护触发较高值。 L6480的过流保护监控RdsON上的电压降：电阻越低，电流阈值越高。
 
该器件基于电压模式算法，因此您需要计算哪个是合适的电压与速度曲线，以便您获得目标电流。
您可以使用http://www.st.com/web/en/catalog/tools/PF258265中集成的BEMF补偿工具
 为了评估正确的配置参数。
 
问候
恩里科



以下为原文





Hello,


In theory there is no limit to the RdsON value of the external MOSFETs. Lowering the on resistance has the following drawbacks:
- the commutation speed is lower because MOSFETs with a lower RdsON usually has an higher total gate charge (the total gate charge of your target MOSFET should be lower than the IGATE x TCC product)
- The overcurrent protection triggers at higher values. The overcurrent protection of the L6480 monitors the voltage drop on the RdsON: the lower the resistance, the higher the current threshold.

The device is based on the voltage mode algorithm, so you need to calculates which is the proper voltage vs speed curve which allows you to obtain the target current.
You can use the BEMF compensation tool integrated in the http://www.st.com/web/en/catalog/tools/PF258265
in order to evaluate the proper configuration parameters.

Regards
Enrico