怎么以编程方式擦除闪存块

各位早上好。


我试图擦除闪存块。我尽量不使用驱动程序。现在，我按照参考手册第614页设法用存储数据对闪存的各个存储单元进行编程。

现在，为了存储新值，我想按照第616页的指南以编程方式擦除闪存块。

我使用以下代码：






问题是，在将MCR [EHV]设置为1后，微观误差。奇怪的是MCR [RWE]设置为1，表示读取写入事件错误。我不明白为什么会这样。
我正在尝试对没有程序代码（只有存储值）的块进行操作，并且我正在执行RM规定的操作。该块未锁定：HBL寄存器中的相应位设置为0。
使用其他工具重置工作，因此不是闪存的问题，而是代码的问题。

有人对这段代码有一些了解吗？

谢谢，
伊万
＃闪存擦除



以下为原文




Good morning to everyone.


I am trying to erase a flash memory block. I am try not to use the drivers. As now, I managed to program individual memory cells of the flash memory with storage data, following the Reference Manual at page 614.

Now, in order to store new values, I want to programmatically erase a flash memory block following the guide at page 616.

I use the following code:

• CFLASH.MCR.R = CFLASH.MCR.R | 0x4;      /* Change the value of MCR[ERS] bit from 0 to 1. */
  

• CFLASH.HBS.B.HSL = 0b01; /* Select H0 flash memory block: High Address Space starting at 0x0008_0000*/
  

• *(ULONG*)0x00080000 = 1;  /* Interlock writing as per RM pag 617.*/
  

• CFLASH.MCR.R = CFLASH.MCR.R | 0x1;  /* Set MCR[EHV] to 1, in order to start an internal erase sequnece. */
  

• /*... unreachable code. */
  

The problem is that, after setting MCR[EHV] to 1, the micro go in error. The strange thing is that MCR[RWE] is set to 1, indicating a Read While Write Event Error. I don't understand why this is the case.  
I am trying the operation on a block where there is no program code (only a stored value) and I am doing the actions prescribed by the RM. The block is not locked: the corresponding bit in HBL register is set to 0.  
Resets using other tools work, so is not a problem of the flash, but of the code.

Someone has some idea regarding this code snippet?

Thank you,
Ivan  
#flash-erase